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2N3867SMD05 - PNP SWITCHING SILICON TRANSISTOR

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PNP SWITCHING SILICON TRANSISTOR 2N3867SMD05 • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 40V VCEO Collector – Emitter Voltage 40V VEBO Emitter – Base Voltage 4V IC Continuous Collector Current 3A IB Base Current 0.5A PD Total Power Dissipation at TC = 25°C(1) 35W TA = 25°C(2) 1.0W TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max.