The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
2N4239
• VCBO=100V(Min), VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and
Amplifier Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
100V
VCEO
Collector – Emitter Voltage
80V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
1.0A
IB
Base Current
0.5A
PD
Total Power Dissipation at TA = 25°C
1.0W
Derate Above 25°C
5.