TT 2N4393
SILICON SMALL SIGNAL N-CHANNEL JFET
APPLICATIONS
.ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VDS Drain – Source Voltage 40V VGS Gate – Source Voltage -40V VGD Gate – Drain Voltage -40V IG Gate Current 50mA PD Total Power Dissipation at TA = 25°C 300mW Derate Above 25°C 2mW/°C TJ Junction Temperature Range -55 to +175°C Tstg Storage Temperature Range -65 to +200°CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)GSS VGS(off) IDSS(1) IGSS Gate – Source Breakdown Voltage Gate – Source Cut-off Voltage Saturation Drain Current Gate Reverse Current VDS = 0V VDS = 20V VDS = 20V VDS = 0V IG = 1.0µA ID = 1.0nA VGS = 0V VGS = -20V TA = 150°C ID(off) VDS(on) RDS(on) Drain Cut-off Current Drain – Source On Voltage Drain – Source On Resistance VDS = 20V VGS = 0V VGS = 0 VGS = -5