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SILICON SMALL SIGNAL N-CHANNEL JFET
2N4393
• High Speed Switching. • Low On Resistance. • Designed For High Reliability and Space Applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS Drain – Source Voltage
40V
VGS Gate – Source Voltage
-40V
VGD
Gate – Drain Voltage
-40V
IG Gate Current
50mA
PD Total Power Dissipation at TA = 25°C
300mW
Derate Above 25°C
2mW/°C
TJ Junction Temperature Range
-55 to +175°C
Tstg Storage Temperature Range
-65 to +200°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)GSS VGS(off) IDSS(1)
IGSS
Gate – Source Breakdown Voltage Gate – Source Cut-off Voltage Saturation Drain Current
Gate Reverse Current
VDS = 0V VDS = 20V VDS = 20V VDS = 0V
IG = 1.0µA ID = 1.
2N4393 Datasheet
