2N4915 - SILICON EPITAXIAL NPN TRANSISTOR

Datasheet Details

Part number	2N4915
Manufacturer	TT
File Size	182.37 KB
Description	SILICON EPITAXIAL NPN TRANSISTOR
Datasheet	2N4915 Datasheet
Additional preview pages of the 2N4915 datasheet.

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SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 5A IB Base Current 1.0A PD Total Power Dissipation at TC = 25°C 87.5W Derate Above 25°C 0.5W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max.

Published: Jun 16, 2017 |