2N5154T2A - SILICON EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N5154T2A
Manufacturer	TT Electronics
File Size	112.23 KB
Description	SILICON EPITAXIAL NPN TRANSISTOR
Datasheet	2N5154T2A Datasheet

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SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage 5.5V IC Continuous Collector Current 2A ICM Peak Collector Current (1) 10A PD Total Power Dissipation at TA = 25°C 1W Derate Above 25°C 5.71mW/°C PD Total Power Dissipation at TC = 50°C 10W Derate Above 50°C 66.67mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max.