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2N5878 - HIGH POWER SILICON NPN TRANSISTORS

Download the 2N5878 datasheet PDF. This datasheet also covers the 2N5876 variant, as both devices belong to the same high power silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5876-TT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by TT Electronics

Part Number Description
2N5876 HIGH POWER SILICON PNP TRANSISTORS
2N5883 SILICON EPITAXIAL PNP TRANSISTOR
2N5154T2A SILICON EPITAXIAL NPN TRANSISTOR
2N5154X-220M SILICON NPN POWER TRANSISTOR
2N5320 SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 (PNP) 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Continuous Collector Current IB Base Current PD Total Power Dissipation at TC = 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case 2N5876 PNP 2N5878 NPN -80V 80V -80V 80V -5V 5V 10A 4A 150W 0.857W/°C -65 to +200°C -65 to +200°C Max. 1.