TT 2N5878
HIGH POWER SILICON NPN TRANSISTORS
APPLICATIONS
.● Screening Options Available.
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Continuous Collector Current IB Base Current PD Total Power Dissipation at TC = 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case 2N5876 PNP 2N5878 NPN -80V 80V -80V 80V -5V 5V 10A 4A 150W 0.857W/°C -65 to +200°C -65 to +200°C Max. 1.17 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Roa...