TT 2N6277
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
| Part No. | 2N6277 |
|---|---|
| Datasheet | 2N6277 Download |
| Manufacturer |  TT |
| Description | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
.● Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 180V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 50A ICM Peak Collector Current 100A IB Base Current 20A PD Total Power Dissipation at TC = 25°C 250W Derate Above 25°C 1.43W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information fu
