2N6277 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N6277
Manufacturer	TT Electronics
File Size	192.98 KB
Description	SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Datasheet	2N6277 Datasheet

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE(sat). • Fast Switching. • Hermetic TO3 Metal package. • Ideally suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 180V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 50A ICM Peak Collector Current 100A IB Base Current 20A PD Total Power Dissipation at TC = 25°C 250W Derate Above 25°C 1.