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N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
2N7077
•
VDSS = 400V, ID(CONT) = 15A, RDS(on) = 300mΩ
•
Hermetic Isolated Metal TO-254AA Package
•
Integral Body Diode
•
High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless
VDS
Drain – Source Voltage
VGS
Gate – Source Voltage
ID ID
Continuous Drain Current Continuous Drain Current
TJ = 150°C
Tc = 25°C Tc = 100°C
IDM
Pulsed Drain Current (1)
PD
Total Power Dissipation at
Tc = 25°C
Derate Above 25°C
TJ
Junction Temperature Range
Tstg
Storage Temperature Range
THERMAL PROPERTIES
Symbol Parameter
RθJC RθJA
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ
2N7077 Datasheet
