BDS18SMD - SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Datasheet Details

Part number	BDS18SMD
Manufacturer	TT
File Size	455.50 KB
Description	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
Datasheet	BDS18SMD Datasheet
Additional preview pages of the BDS18SMD datasheet.

📁 Similar Datasheet

BDS18SMD - Silicon PNP Transistor (Seme LAB)
BDS18 - Silicon PNP Transistor (Seme LAB)
BDS18 - Silicon PNP Power Transistor (Inchange Semiconductor)
BDS10 - SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES (Seme LAB)
BDS101 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
BDS102 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
BDS103 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
BDS104 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
BDS105 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)
BDS106 - SINGLE PHASE SURFACE MOUNT BRIDGE RECTIFIER (First Silicon)

Other Datasheets by TT

BDS18 - SILICON PLANAR EPITAXIAL PNP TRANSISTOR
BDS16 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BDS17 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BDS19 - SILICON PLANAR EPITAXIAL PNP TRANSISTOR
BDS20 - SILICON EPIBASE NPN DARLINGTON TRANSISTOR
BDS21 - SILICON EPIBASE PNP DARLINGTON TRANSISTOR

Full PDF Text Transcription

Click to expand full text

SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18SMD • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -120V VCEO Collector – Emitter Voltage -120V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -8A IB Base Current -2A PD Total Power Dissipation at TC ≤ 75°C 80W Derate Above 75°C 0.64W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.

Published: Jul 2, 2018 |