BDS18SMD - SILICON PLANAR EPITAXIAL PNP TRANSISTOR

TT Electronics

Datasheet Details

Part number	BDS18SMD
Manufacturer	TT Electronics
File Size	455.50 KB
Description	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
Datasheet	BDS18SMD Datasheet

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18SMD • High Voltage • Hermetic Ceramic Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -120V VCEO Collector – Emitter Voltage -120V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -8A IB Base Current -2A PD Total Power Dissipation at TC ≤ 75°C 80W Derate Above 75°C 0.64W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.