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BDY71X - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

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Datasheet Details

Part number BDY71X
Manufacturer TT
File Size 80.35 KB
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 90V VCEO Collector – Emitter Voltage 55V VCEX Collector – Emitter Voltage VBE = -1.5V 90V VCER Collector – Emitter Voltage RBE = 100Ω 60V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 4A IB Base Current 2A PD Total Power Dissipation at TC = 25°C 29W Derate Above 25°C 0.17W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max.
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