Datasheet4U Logo Datasheet4U.com

BFY50 - SILICON NPN TRANSISTOR

📥 Download Datasheet

📁 Similar Datasheet

  • BFY50 - NPN medium power transistors (NXP)
  • BFY50 - MEDIUM POWER AMPLIFIER (STMicroelectronics)
  • BFY50 - MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR (Seme LAB)
  • BFY50 - SILICON PLANAR TRANSISTORS (CDIL)
  • BFY50 - GENERAL PURPOSE TRANSISTOR (Motorola)
  • BFY51 - NPN medium power transistors (NXP)
  • BFY51 - MEDIUM POWER AMPLIFIER (STMicroelectronics)
  • BFY51 - SILICON PLANAR TRANSISTORS (CDIL)
  • BFY51 - Bipolar NPN Device (Seme LAB)
  • BFY51 - GENERAL PURPOSE TRANSISTOR (Motorola)
Other Datasheets by TT
  • BFY51 - SILICON NPN TRANSISTOR
  • BFY52 - SILICON NPN TRANSISTOR
  • BFY81 - SILICON DUAL MATCHED NPN TRANSISTORS

Full PDF Text Transcription

Click to expand full text
SILICON NPN TRANSISTOR BFY50 • V(BR)CEO = 35V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 35V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 0.8W Derate Above 25°C 4.57mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 218.
Published: |