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SILICON EPITAXIAL NPN TRANSISTOR
BSX52A
• Hermetic TO-18 Metal package. • Designed For Low Frequency Amplifiers,
and Low Current Switching Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
50V
VCEO
Collector – Emitter Voltage
50V
VEBO
Emitter – Base Voltage
7V
IC
Continuous Collector Current
200mA
PD
Total Power Dissipation at TA = 25°C
300mW
Derate Above 25°C
2mW/°C
TJ
Junction Temperature Range
-65 to +175°C
Tstg
Storage Temperature Range
-65 to +175°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
Max. 500
Units °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
BSX52A Datasheet
