BUL54A-TO5
Features
:
- -
- Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector
- Base Voltage (IE = 0)
1000V
VCEO
Collector
- Emitter Voltage (IB = 0)
500V
VEBO
Emitter
- Base Voltage (Ic = 0)
10V
Continuous Collector Current
4A
PTOT
Total Power Dissipation at Tc = 25°C
20W
Operating Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max 6.25
Units °C/W
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