• Part: BUL54A-TO5
  • Description: SILICON POWER NPN TRANSISTOR
  • Category: Transistor
  • Manufacturer: TT Electronics
  • Size: 137.89 KB
Download BUL54A-TO5 Datasheet PDF
TT Electronics
BUL54A-TO5
Features : - - - Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector - Base Voltage (IE = 0) 1000V VCEO Collector - Emitter Voltage (IB = 0) 500V VEBO Emitter - Base Voltage (Ic = 0) 10V Continuous Collector Current 4A PTOT Total Power Dissipation at Tc = 25°C 20W Operating Junction Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max 6.25 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be...