TT BUX11
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
| Part No. | BUX11 |
|---|---|
| Datasheet | BUX11 Download |
| Manufacturer |  TT |
| Description | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 250V VCEX Collector – Emitter Voltage VBE = -1.5V 250V VCEO Collector – Emitter Voltage 200V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 20A ICM Peak Collector Current tp = 10ms 25A IB Base Current 4A PD Total Power Dissipation at TC = 25°C 110W Derate Above 25°C 0.63W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.59 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
