BUX23 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	BUX23
Manufacturer	TT Electronics
File Size	199.96 KB
Description	SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Datasheet	BUX23 Datasheet

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX23 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 400V VCEX Collector – Emitter Voltage VBE = -1.5V 400V VCEO Collector – Emitter Voltage 325V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 30A ICM Peak Collector Current tp = 10ms 40A IB Base Current 6A PD Total Power Dissipation at TC = 25°C 250W Derate Above 25°C 1.67W/°C TJ Junction Temperature Range -65 to +175°C Tstg Storage Temperature Range -65 to +175°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min.