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D2015UK - RF Silicon Mosfet

General Description

Single-Ended RF Silicon Mosfet.

Source Breakdown Voltage BVGSS Gate Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Ope

Key Features

  • Simplified Amplifier Design.
  • Suitable for Broad Band.

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Part Number Description
D2014UK RF Silicon Mosfet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF Silicon Mosfet 5W 500MHz 28V Single-Ended D2015UK Features: • Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simple Bias Circuits • Low Noise • High Gain – 13dB Minimum • RoHS Compliant Description: Single-Ended RF Silicon Mosfet. 5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 29W 65V +20V 2A -65 to +150°C 200°C MAX UNITS 6.