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N-CHANNEL POWER MOSFET
IRF240
• Low RDS(on) MOSFET Transistor In A Hermetic Metal Package
• Designed For Switching, Power Supply, Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
200V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current Tc = 25°C
18A
ID
Continuous Drain Current Tc = 100°C
11A
IDM
Pulsed Drain Current (1)
72A
PD
Total Power Dissipation at Tc = 25°C
125W
Derate Above 25°C
1.0W/°C
EAS
Single Pulse Avalanche Energy (2)
12.
IRF240 Datasheet
