IRFN5210
P-CHANNEL POWER MOSFET
- Low RDS(on) Power MOSFET Transistor, Fully Avalanche Rated
- Hermetic Ceramic Surface Mount package
- Designed For Fast Switching Applications
- Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
Drain
- Source Voltage
-100V
Gate
- Source Voltage
±20V
Continuous Drain Current Tc = 25°C
-34A
Continuous Drain Current Tc = 100°C
-24A
Pulsed Drain Current (1)
-120A
Total Power Dissipation at Tc = 25°C
150W
Derate Above 25°C
1.0W/°C
Single Pulse Avalanche Energy (2)
780m J dv/dt
Peak Diode Recovery (3)
-5.0V/ns
Junction Temperature Range
-55 to +175°C
Tstg
Storage Temperature Range
-55 to +175°C
THERMAL...
