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P-CHANNEL POWER MOSFET
IRFN5210
• Low RDS(on) Power MOSFET Transistor, Fully Avalanche Rated
• Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
-100V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current Tc = 25°C
-34A
ID
Continuous Drain Current Tc = 100°C
-24A
IDM
Pulsed Drain Current (1)
-120A
PD
Total Power Dissipation at Tc = 25°C
150W
Derate Above 25°C
1.0W/°C
EAS
Single Pulse Avalanche Energy (2)
780mJ
dv/dt
Peak Diode Recovery (3)
-5.
IRFN5210 Datasheet
