IRFY330 Datasheet PDF

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 400V VGS Gate – Source Voltage ±20V ID Continuous Drain Current Tc = 25°C 5.5A ID Continuous Drain Current Tc = 100°C 3.5A IDM Pulsed Drain Current (1) 22A PD Total Power Dissipation at Tc = 25°C 75W Derate Above 25°C 0.6W/°C EAS Single Pulse Avalanche Energy (2)(5) 1.7mJ IAR Avalanche Current (1)(5) 5.5A dv/dt Peak Diode Recovery (3)(5) 4V/ns TJ Junction Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.67 Units °C/W INTERNAL PACKAGE INDUCTANCE Symbols Parameters LD Internal Drain Inductance LS Internal Source Inductance Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 50V, Starting TJ = 25°C, Peak IL = 5.5A, (3) @ ISD ≤ 5.5A, di/dt ≤ 90A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 7.5Ω (4) Pulse Width ≤ 380us, δ ≤ 2% (5) By Design Only, Not A Production Test.