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MG9410-R - SILICON EPITAXIAL PLANAR PNP TRANSISTOR

This page provides the datasheet information for the MG9410-R, a member of the MG9410 SILICON EPITAXIAL PLANAR PNP TRANSISTOR family.

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Datasheet Details

Part number MG9410-R
Manufacturer TT
File Size 601.21 KB
Description SILICON EPITAXIAL PLANAR PNP TRANSISTOR
Datasheet download datasheet MG9410-R Datasheet
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Full PDF Text Transcription

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SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R • TO-3P Plastic Package • Complimentary NPN – MG6330 • Designed specifically for audio power amplifier applications • High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current Total Power Dissipation at TA = 25°C Maximum Junction Temperature Storage Temperature Range MG9410 MG9410-R -230V -260V -230V -260V -5V -15A -4A 200W 150°C -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.
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