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MG9410-R - SILICON EPITAXIAL PLANAR PNP TRANSISTOR

Download the MG9410-R datasheet PDF. This datasheet also covers the MG9410 variant, as both devices belong to the same silicon epitaxial planar pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MG9410-TT.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R • TO-3P Plastic Package • Complimentary NPN – MG6330 • Designed specifically for audio power amplifier applications • High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current Total Power Dissipation at TA = 25°C Maximum Junction Temperature Storage Temperature Range MG9410 MG9410-R -230V -260V -230V -260V -5V -15A -4A 200W 150°C -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.