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OHS3151U - Ratiometric Linear Hall-Effect Sensor

Download the OHS3151U datasheet PDF. This datasheet also covers the OHS3150U variant, as both devices belong to the same ratiometric linear hall-effect sensor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  •  .
  •  Ra ometric linear output capable of sinking and sourcing current .
  •  4.5 V to 6.0 V opera on .
  •  Responds equally to posi ve and nega ve magne c fields .
  •  Excellent temperature stability to operate in harsh environments .
  •  Robust package capable of withstanding harsh environments  Descrip on:  Each ratiometric linear Hall-effect sensor contains a monolithic integrated circuit on a single chip. This circuit incorporates a quadratic Hall sensing element, which minimizes.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OHS3150U-TT.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by TT Electronics

Part Number Description
OHS3150U Ratiometric Linear Hall-Effect Sensor
OHS3120U Hallogic Hall-Effect Sensors
OHS3130U Hallogic Hall-Effect Sensors
OHS3131U Hallogic Hall-Effect Sensors
OHS3140U Hallogic Hall-Effect Sensors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Sensing and Control Ratiometric Linear Hall-Effect Sensor OHS3150U, OHS3151U Features:   Ra ometric linear output capable of sinking and sourcing current   4.5 V to 6.0 V opera on   Responds equally to posi ve and nega ve magne c fields   Excellent temperature stability to operate in harsh environments   Robust package capable of withstanding harsh environments  Descrip on:  Each ratiometric linear Hall-effect sensor contains a monolithic integrated circuit on a single chip. This circuit incorporates a quadratic Hall sensing element, which minimizes the effects of mechanical and thermal stress on the Hall element and temperature compensating circuitry to compensate for the inherent Hall element sensitivity change over temperature current.