TT OP235TX
The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors.| Part No. | OP235TX |
|---|---|
| Datasheet | OP235TX Download |
| Manufacturer |  TT |
| Description | High Reliability Hermetic Infrared Emitting Diode |
| Buy | Stock & Price |
FEATURES
:● TO-46 hermetically sealed package with lens
● Twice the power output of GaAs at same drive current
● Characterized to define infrared energy along mechanical axis of device
● Narrow beam angle
● Processed to MIL-PRF-19500
DESCRIPTION
: Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. Devices have lens cans that provide an 18° beam angle between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and OP805 series of high reliability phototransistors. TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. After 100 % screening, Group A and B are performed on every lot and a Group C test is performed every six months. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.APPLICATIONS
:● Non-contact reflective...
