Part OP235TX
Description High Reliability Hermetic Infrared Emitting Diode
Category Diode
Manufacturer TT Electronics
Size 406.86 KB
Pricing from 100.672 USD, available from Master Electronics and Onlinecomponents.com.
TT Electronics

OP235TX Overview

Key Specifications

Package: TO-46-2
Mount Type: Through Hole
Max Operating Temp: 125 °C
Min Operating Temp: -55 °C

Description

Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors.

Key Features

  • TO-46 hermetically sealed package with lens
  • Twice the power output of GaAs at same drive current
  • Characterized to define infrared energy along mechanical axis of device
  • Narrow beam angle
  • Processed to MIL-PRF-19500

Price & Availability

Seller Inventory Price Breaks Buy
Master Electronics 2 3+ : 100.672 USD
100+ : 91.52 USD
200+ : 48.45 USD
400+ : 34.1 USD
View Offer
Onlinecomponents.com 2 3+ : 100.672 USD
100+ : 91.52 USD
200+ : 48.45 USD
400+ : 34.1 USD
View Offer