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OP508FA - NPN Silicon Phototransistor

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General Description

The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package.

The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point.

Overview

NPN Silicon Phototransistor OP508FA, OP509A, OP509B Obsolete (OP508FC,.

Key Features

  • Flat lensed for wide acceptance angle (OP508F).
  • Lensed for high sensitivity (OP509).
  • Easily stackable on 0.100” (2.54 mm) hole centers.
  • Inexpensive plastic package.
  • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes OP508 OP509.

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