OPB815L Overview
Description
The OPB815 consists of an infrared Light Emitting Diode (LED) and an NPN silicon phototransistor mounted in a low-cost plastic housing. The device is designed to switch electrical states when an opaque object is passed through the slot.
Key Features
- Wide slot width: 0.375” (9.5 mm)
- Deep slot depth: 0.430” (10.9 mm) L Package WZ Package
