• Part: SIMFSBSS123T2
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: TT Electronics
  • Size: 731.36 KB
Download SIMFSBSS123T2 Datasheet PDF
TT Electronics
SIMFSBSS123T2
N-Channel Enhancement Mode Power MOSFET Hermetic TO39 (TO205AD) Package VDS = 100V , ID = 0.43A, RDS(ON) = 6.0Ω Fast Switching Integral Source-Drain Body Diode High Reliability and Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) Drain - Source Voltage Gate - Source Voltage ID(1) Continuous Drain Current TC = 25°C IDM(1)(2) Pulsed Drain Current Total Power Dissipation at TC ≤ 25°C De-rate TC > 25°C Operating Temperature Range Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case 100V ±20V 0.43A 0.575A 2.5W 20m W/°C -65 to +150°C -65 to +150°C Max. 50 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors...