SIMFSZN2106M1
N-Channel Enhancement Mode Power MOSFET
Hermetic Metal TO-257AA Package VDSS = 60V , ID = 1.0A, RDS(ON) = 4.0Ω Fast Switching, Low CISS Integral Source-Drain Body Diode High Reliability and Screening options available Termination Finish Options
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
Drain
- Source Voltage
Gate
- Source Voltage
Continuous Drain Current (1) Tc = 25°C
Total Power Dissipation at TJ = 25°C
Derate Above 25°C
Operating Junction Temperature
Tstg
Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Notes
(1) Limited by maximum junction temperature (2) Pulse Width 10 us, δ ≤ 1% (3) Pulse Width ≤ 380us, δ ≤ 2% (4) Indicative by design, not a production test
60V ±20V 1.0A 8.33 W 66.7 m W/°C 150°C -55 to +150°C
Max. 15
Units °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice....
