Built-in 4kΩ resistor between base and emitter. +0.1 2.4-0.1 +0.1 1.3-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
C
0.4
3
+0.05 0.1-0.01
B
+0.1 0.97-0.1
1 Base 2 Emitter
RBE
4kΩ
+0.1 0.38-0.1
E.
Absolute Maximum Ratings Ta = 25℃
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation(TOTAL) Juncti.
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Product specification
2SB852
■ Features
● Darlington connection for high DC current gain. ● Built-in 4kΩ resistor between base and emitter.
+0.1 2.4-0.1 +0.1 1.3-0.1
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
C
0.4
3
+0.05 0.1-0.01
B
+0.1 0.97-0.1
1 Base 2 Emitter
RBE
4kΩ
+0.1 0.38-0.
2SB852 Datasheet
