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2SC2780 - Transistor

Key Features

  • br>.
  • High Collector-emitter voltage.
  • Complements to PNP type 2SA1173 1 0.48±0.1 2 3 0.80±0.1 0.44±0.1 0.53±0.1 3.00±0.1 0.40±0.1 2.60±0.1 2.50±0.1 4.00±0.1 1.Base 2.Collector 3.Emitter.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP.
  • Collector power dissipation Junction temperature Storage temperature PC PC.
  • 2 Tj Tstg 1 Rating 140 140 5 50 2.5 0.5 2 150.

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Datasheet Details

Part number 2SC2780
Manufacturer TY Semiconductor
File Size 97.97 KB
Description Transistor
Datasheet download datasheet 2SC2780 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification 2SC2780 SOT-89 4.50±0.1 1.80±0.1 Unit:mm 1.50 ±0.1 ■ Features ● High Collector-emitter voltage. ● Complements to PNP type 2SA1173 1 0.48±0.1 2 3 0.80±0.1 0.44±0.1 0.53±0.1 3.00±0.1 0.40±0.1 2.60±0.1 2.50±0.1 4.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP * Collector power dissipation Junction temperature Storage temperature PC PC *2 Tj Tstg 1 Rating 140 140 5 50 2.5 0.5 2 150 -55 to +150 Unit V V V mA A W W ℃ ℃ *1. Pw≤10ms,duty cycle ≤50% *2. When mounted on ceramic substrate of 16cm2 × 0.