WNM2020 - N-Channel MOSFET

TY Semiconductor

General Description

The WNM2020 is N-Channel enhancement MOS Field Effect Transistor.

with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Key Features

Pin configuration (Top view) z z z z z Trench Technology Supper high density cell design 3 W28.
Excellent ON resistance 1 2 Extremely Low Threshold Voltage Small package SOT-23 W28 = Device Code.
= Month (A~Z) Marking.

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WNM2020 n-channel mosfet by TY Semiconductor - Datasheet Preview

Datasheet Details

Part number	WNM2020
Manufacturer	TY Semiconductor
File Size	185.16 KB
Description	N-Channel MOSFET
Datasheet	WNM2020 Datasheet

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Full PDF Text Transcription (Reference)

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Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) SOT-23 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2020 is Pb-free.