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TA9410E - GaN Power Transistor

General Description

The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band.

The input and output can be matched for best power and efficiency for the desired band.

Key Features

  • Small signal gain @ 1000MHz: 20dB.
  • Gain at P3dB @ 1000MHz: 17dB.
  • P3dB @ 1000MHz: 44dBm.
  • PAE @ P3dB @ 1000MHz: 57%.
  • 50V Typical operation.
  • Operating frequency: 20MHz to 3.0GHz 2.0.

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Datasheet Details

Part number TA9410E
Manufacturer Tagore
File Size 1.84 MB
Description GaN Power Transistor
Datasheet download datasheet TA9410E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TA9410E TA9410E – 25W CW, 50V, 20 - 3000MHz GaN Power Transistor 1.0 Features ● Small signal gain @ 1000MHz: 20dB ● Gain at P3dB @ 1000MHz: 17dB ● P3dB @ 1000MHz: 44dBm ● PAE @ P3dB @ 1000MHz: 57% ● 50V Typical operation ● Operating frequency: 20MHz to 3.0GHz 2.0 Applications ● Private mobile radio handsets ● Public safety radios ● Cellular infrastructure ● Military radios 3.0 Description The TA9410E is a broadband GaN power transistor capable of delivering 25W CW from 20MHz to 3.0GHz frequency band. The input and output can be matched for best power and efficiency for the desired band. Figure 1.1 Device Image (8 Pin 6×5×0.8mm QFN Package) RoHS/REACH/Halogen Free Compliance The TA9410E is packaged in a compact, low cost Quad Flat No lead (QFN) 5x6x0.8mm, 8 leads plastic package. 4.