Tagore TP44200SG
The TP44200SG is a 180 mΩ 650 V SUPERIOR GaN HEMT power device. With low input/output capacitances and a low inductance QFN package, the device allows high frequency switching.| Part No. | TP44200SG |
|---|---|
| Datasheet | TP44200SG Download |
| Manufacturer | Tagore |
| Description | 650V GaN HEMT |
| Buy | Stock & Price |
FEATURES
● 650 V e-mode power HEMT● RDSON: 180 mΩ
● IDS: 10 A (max) / IDSpulse: 15 A (max)
● ESD protection on all pins
● Adjustable turn-on/-off speed
● Reverse conduction capability
● Zero reverse-recovery loss
● High switching frequency capability
● LV-isolated thermal-pad for better thermal connection even with current-sense resistors
● Interfaces with 6 V and ≥12 V drivers (see Application Information) (Top View) (Bottom View) Figure 1 Device Image (22 pin 5×7×0.8 mm QFN Package) 2.0 Topologies and
APPLICATIONS
● Ac-dc, dc-dc, dc-ac converters● Totem-pole and bi-directional PFCs
● Half- and full-bridge LLC converters
● High-frequency electronic transformers
● Mobile chargers and laptop adapters
● LED and motor drives
● Server power supplies
● Inverters RoHS/REACH/Halogen Free Compliance 3.0
DESCRIPTION
Simple external interface circuit can be used to drive this device both from dedicated 6 V GaN drivers as well as more traditional 12 V drivers. No external VCC is needed in either case.
