Datasheet Summary
Product Datasheet
Half Bridge Module IGBT Module
S9 Module with low loss IGBT and Fast recovery diode.
Feature
Appearance
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- Maximum junction temperature 175℃
. Applications
- Inverter for motor drive L
- AC and DC servo drive amplifier
- Uninterruptible power supply o. Maximum Ratings of IGBT (Tvj=25 ℃ unless otherwise noted )
Items
Symbol
Conditions
C Collector-emitter voltage
VCES s Gate-emitter voltage ic Collector current
VGES IC
Tvj=25℃ Tvj=100℃ n Pulsed collector current
ICM tP=1ms tro Short circuit current
Isc
VGE≤15V,VCC=300V,tP=10us VCEmax=VCES-LsCE ꞏdi/dt c Maximum power...