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T14L1024N - 128K X 8 HIGH SPEED CMOS STATIC RAM

General Description

The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits.

It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers.

Key Features

  • Fast Address Access Times : 10/12/15ns.
  • Single 3.3V ±0.3V power supply.
  • Center power/ground pin configuration.
  • Low Power Consumption : 110/105/100mA.
  • TTL I/O compatible.
  • 2.0V data retention mode.
  • Automatic power-down when deselected.
  • Available packages : - 32-pin 300 mil and 400 mil SOJ - 32-pin TSOP 8x13.4mm and 8x20mm - 36-Ball CSP (8x10mm) 128K X 8 HIGH SPEED CMOS STATIC RAM.

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Datasheet Details

Part number T14L1024N
Manufacturer Taiwan Memory Technology
File Size 246.37 KB
Description 128K X 8 HIGH SPEED CMOS STATIC RAM
Datasheet download datasheet T14L1024N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com tm TE CH T14L1024N SRAM FEATURES • Fast Address Access Times : 10/12/15ns • Single 3.3V ±0.3V power supply • Center power/ground pin configuration • Low Power Consumption : 110/105/100mA • TTL I/O compatible • 2.0V data retention mode • Automatic power-down when deselected • Available packages : - 32-pin 300 mil and 400 mil SOJ - 32-pin TSOP 8x13.4mm and 8x20mm - 36-Ball CSP (8x10mm) 128K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance CMOS technology, access times down to 10ns are achieved.