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T14L1024N Datasheet PDF

Taiwan Memory Technology T14L1024N

The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers.
Part No. T14L1024N
Datasheet T14L1024N Download
Manufacturer
Taiwan Memory Technology
Description 128K X 8 HIGH SPEED CMOS STATIC RAM
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T14L1024N datasheet page 1 preview

FEATURES

● Fast Address Access Times : 10/12/15ns
● Single 3.3V ±0.3V power supply
● Center power/ground pin configuration
● Low Power Consumption : 110/105/100mA
● TTL I/O compatible
● 2.0V data retention mode
● Automatic power-down when deselected
● Available packages : - 32-pin 300 mil and 400 mil SOJ - 32-pin TSOP 8x13.4mm and 8x20mm - 36-Ball CSP (8x10mm) 128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION

Fabricated using high performance CMOS technology, access times down to 10ns are achieved. BLOCK DIAGRAM Vcc Vss A0 . .. . A16 CE DATA I/O WE OE DECODER PART NUMBER EXAMPLES T14L1024N-10J T14L1024N-10W T14L1024N-10P T14L1024N-10H T14L1024N-10C PACKAGE SPEED SOJ 300mil 10ns SOJ 400 mil 10ns 10ns TSOP 8x13.4mm TSOP 8x20mm 10ns 36-Ball CSP 10ns CORE ARRAY I/O0 . . . I/O7 PIN

DESCRIPTION

SYMBOL A0 - A16 I/O0 - I/O7 CE WE OE Vcc Vss

DESCRIPTION

Address Inputs Data Inputs/Outputs Chip Select Inputs Write Enable Output Enable Power Supply Ground TM Technology Inc. reserves the right P.
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