T221160A - 64K x 16 DYNAMIC RAM FAST PAGE MODE

Datasheet Summary

Description

The T221160A is a randomly accessed solid state memory containing 1,048,551 bits organized in a x16 configuration.

The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins.

Features

64K x 16.

Taiwan Memory Technology

📥 Download Datasheet

Datasheet Details

Part number	T221160A
Manufacturer	Taiwan Memory Technology
File Size	295.44 KB
Description	64K x 16 DYNAMIC RAM FAST PAGE MODE
Datasheet	T221160A Datasheet
Additional preview pages of the T221160A datasheet.

📁 Similar Datasheet

T221N - Phase Control Thyristor (eupec)
T220176C08WR00 - Display Module (Crystal Clear Technology)
T2206 - T2206 (InNET)
t22205B - 2000 Slide Switches (Arcoelectric Switches)
T2250AB25E - Insulated Gate Bi-Polar Transistor (IXYS)
T2251N - Phase Control Thyristor (Infineon)

Other Datasheets by Taiwan Memory Technology

T224160B - 256K x 16 DYNAMIC RAM FAST PAGE MODE
T224162B - 256K x 16 DYNAMIC RAM EDO PAGE MODE

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com tm TE CH T221160A DRAM FEATURES 64K x 16 DYNAMIC RAM FAST PAGE MODE PIN ASSIGNMENT ( Top View ) V cc I/01 I/02 I/03 I/04 V cc I/05 I/06 I/07 I/08 NC NC WE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 V ss I/016 I/015 I/014 I/013 V ss I/012 I/011 I/010 I/09 NC CASL CASH OE NC A7 A6 A5 A4 VSS • High speed access time : 25/30/35/40 ns • Industry-standard x 16 pinouts and timing functions. • Single 5V (±10%) power supply. • All device pins are TTL- compatible. • 256-cycle refresh in 4ms. • Refresh modes: RAS only, CAS BEFORE RAS (CBR) and HIDDEN. • Conventional FAST PAGE MODE access cycle. • BYTE WRITE and BYTE READ access cycles.

Published: Oct 31, 2006 |