T35L3232B Description
The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L3232B SRAM integrates 32,768 x 32 bits SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation.
T35L3232B Key Features
- Pipeline
- 3.8 / 4 / 4.5 ns
- Flow-through
- 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply ¡Emon data inputs and data outputs ¡EIndividual BYTE WRITE ENABLE
- Interleaved (MODE=NC or VCC)
- Linear (MODE=GND)
- 4.5 4.5ns 8.5ns 11ns 15ns