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T35L3232B - 32K x 32 SRAM

Description

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

Features

  • ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline.
  • 3.8 / 4 / 4.5 ns - Flow-through.
  • 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply ¡ECommon data inputs and data outputs ¡EIndividual BYTE WRITE ENABLE and GLOBAL WRITE control ¡E Three chip enables for depth expansion and address pipelining ¡E Clock-controlled and registered address, data I/Os and control signals ¡EInternally self-timed WRITE CYCLE ¡EBurst control pins (.

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Datasheet preview – T35L3232B

Datasheet Details

Part number T35L3232B
Manufacturer Taiwan Memory Technology
File Size 257.88 KB
Description 32K x 32 SRAM
Datasheet download datasheet T35L3232B Datasheet
Additional preview pages of the T35L3232B datasheet.

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Full PDF Text Transcription

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tm TE CH SYNCHRONOUS BURST SRAM Preliminary T35L3232B 32K x 32 SRAM Pipeline and Flow-Through Burst Mode FEATURES ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 ns - Flow-through – 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.
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