T35L3232B - 32K x 32 SRAM

Product Overview

Taiwan Memory Technology

Datasheet Details

Part number	T35L3232B
Manufacturer	Taiwan Memory Technology
File Size	257.88 KB
Description	32K x 32 SRAM
Datasheet	T35L3232B Datasheet
Additional preview pages of the T35L3232B datasheet.

Product details

Description

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Features

¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline.
3.8 / 4 / 4.5 ns - Flow-through.
9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply ¡ECommon data inputs and data outputs ¡EIndividual BYTE WRITE ENABLE and GLOBAL WRITE control ¡E Three chip enables for depth expansion and address pipelining ¡E Clock-controlled and registered address, data I/Os and control signals ¡EInternally self-timed WRITE CYCLE ¡EBurst control pins (.

📁 Similar Datasheet

T350 - Tantalum Through-Hole Capacitor (KEMET)
T350A08X00 - TFT LCD (CRYSTAL CLEAR TECHNOLOGY)
T350AB-LC - Mount Thyristor Surge Protective (Weitron Technology)
T350BB-LC - Surface Mount Thyristor Surge Protective (Weitron Technology)
T350CB-LC - Surface Mount Thyristor Surge Protective (Weitron Technology)
T351 - Tantalum Through-Hole Capacitor (KEMET)
T352 - Tantalum Through-Hole Capacitor (KEMET)
T352Exxxxxx - Tantalum Through-Hole Capacitor (Kemet Corporation)

Other Datasheets by Taiwan Memory Technology

T35L6432A - 64K x 32 SRAM
T35L6432B - 64K x 32 SRAM
T35L6464A - 64K x 64 SRAM

Published: Jan 26, 2006 |