T35L6464A Description
The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.
T35L6464A Key Features
- Fast Access times: 5, 6, 7, and 8ns
- Fast clock speed: 100, 83, 66, and 50 MHz
- Provide high performance 3-1-1-1 access rate
- Fast OE access times: 5 and 6ns
- Single 3.3V +10% / -5V power supply
- mon data inputs and data outputs
- BYTE WRITE ENABLE and GLOBAL
- Five chip enables for depth expansion and
- Address, control, input, and output pipelined
- Internally self -timed WRITE cycle