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T35L6464A - 64K x 64 SRAM

Description

The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

Features

  • Fast Access times: 5, 6, 7, and 8ns.
  • Fast clock speed: 100, 83, 66, and 50 MHz.
  • Provide high performance 3-1-1-1 access rate.
  • Fast OE access times: 5 and 6ns.
  • Single 3.3V +10% / -5V power supply.
  • Common data inputs and data outputs.
  • BYTE WRITE ENABLE and GLOBAL WRITE control.
  • Five chip enables for depth expansion and address pipelining.
  • Address, control, input, and output pipelined registers.
  • Internally se.

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Datasheet preview – T35L6464A

Datasheet Details

Part number T35L6464A
Manufacturer Taiwan Memory Technology
File Size 157.32 KB
Description 64K x 64 SRAM
Datasheet download datasheet T35L6464A Datasheet
Additional preview pages of the T35L6464A datasheet.

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Full PDF Text Transcription

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tm TE CH T35L6464A SYNCHRONOUS BURST SRAM 64K x 64 SRAM 3.3V SUPPLY, FULLY REGISTERED AND OUTPUTS, BURST COUNTER FEATURES • Fast Access times: 5, 6, 7, and 8ns • Fast clock speed: 100, 83, 66, and 50 MHz • Provide high performance 3-1-1-1 access rate • Fast OE access times: 5 and 6ns • Single 3.
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