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TSB1184A - Low Vce(sat) PNP Transistor

Key Features

  • — Low VCE (SAT). Ordering Information Part No. TSB1184ACP Packing Tape & Reel Package TO-252 — Excellent DC current gain characteristics Structure — Epitaxial planar type. — PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC.

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Datasheet Details

Part number TSB1184A
Manufacturer Taiwan Semiconductor Company
File Size 66.18 KB
Description Low Vce(sat) PNP Transistor
Datasheet download datasheet TSB1184A Datasheet

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Full PDF Text Transcription (Reference)

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TSB1184A Low Vce(sat) PNP Transistor Pin Assignment: 1. Base 2. Collector 3. Emitter www.DataSheet4U.com BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A Features — Low VCE (SAT). Ordering Information Part No. TSB1184ACP Packing Tape & Reel Package TO-252 — Excellent DC current gain characteristics Structure — Epitaxial planar type. — PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC Pulse TO-252 PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit - 50V - 50V -6 -3 - 7 (note 1) 1.