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TSD1760 - Low Vcesat NPN Transistor

General Description

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Key Features

  • Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ. ) Complementary part with TSB1184CP Ordering Information Part No. TSD1760CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel Structure.
  • Epitaxial Planar Type NPN Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation DC Pulse Ta=25ºC Tc=25ºC Symbol VCBO VCEO VEBO IC PD Limit 50 50 5 3 7 (.

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Datasheet Details

Part number TSD1760
Manufacturer Taiwan Semiconductor Company
File Size 252.57 KB
Description Low Vcesat NPN Transistor
Datasheet download datasheet TSD1760 Datasheet

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Full PDF Text Transcription (Reference)

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Low Vcesat NPN Transistor TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter www.DataSheet4U.com TSD1760 PRODUCT SUMMARY BVCBO BVCEO IC VCE(SAT) 50V 50V 3A 0.5V @ IC / IB = 2A / 200mA Features ● ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP Ordering Information Part No. TSD1760CP RO Package TO-252 Packing 2.