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TSM13N50 - 500V N-Channel Power MOSFET

General Description

The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Low RDS(ON) 0.48Ω (Max. ) Low gate charge typical @ 36nC (Typ. ) Low Crss typical @ 23pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM13N50CZ C0 TSM13N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
  • Avalanche Current (Single) (Note 2) Single Pulse Avala.

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Datasheet Details

Part number TSM13N50
Manufacturer Taiwan Semiconductor Company
File Size 237.26 KB
Description 500V N-Channel Power MOSFET
Datasheet download datasheet TSM13N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary TSM13N50 www.DataSheet4U.com 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)(Ω) 0.48 @ VGS =10V ID (A) 6.5 General Description The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● ● Low RDS(ON) 0.48Ω (Max.) Low gate charge typical @ 36nC (Typ.) Low Crss typical @ 23pF (Typ.