TSM1412 - 20V N-Channel MOSFET

Taiwan Semiconductor Company

General Description

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Key Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM1412 20v n-channel mosfet by Taiwan Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	TSM1412
Manufacturer	Taiwan Semiconductor Company
File Size	206.14 KB
Description	20V N-Channel MOSFET
Datasheet	TSM1412 Datasheet

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Full PDF Text Transcription (Reference)

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Preliminary 20V N-Channel MOSFET SOT-363 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source www.DataSheet4U.com TSM1412 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 34 @ VGS = 4.5V 20 38 @ VGS = 2.5V 44 @ VGS = 2.0V ID (A) 3 3 3 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Notebook PC Application Portable Equipment Applications Ordering Information Part No.