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TSM1N45D Datasheet 450v N-channel Power MOSFET

Manufacturer: Taiwan Semiconductor Company

Overview: Preliminary TSM1N45D .. 450V N-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 PRODUCT SUMMARY 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 VDS (V) 450 RDS(on)(Ω) 4.25 @ VGS =10V ID (A) 0.

General Description

The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanche and mutation mode.

There devices are well suited for electronic ballasts base and half bridge configuration.

Key Features

  • Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±50V guaranteed Block Diagram Ordering Information Part No. TSM1N45DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Aval.

More Datasheets from Taiwan Semiconductor Company

Part Number Description
TSM1N45 450V N-Channel Power MOSFET
TSM10N60 600V N-Channel Power MOSFET
TSM13N50 500V N-Channel Power MOSFET
TSM1412 20V N-Channel MOSFET
TSM1426 30V N-Channel MOSFET
TSM2301 20V P-Channel Enhancement Mode MOSFET
TSM2301B 20V P-Channel MOSFET
TSM2302 20V N-Channel Enhancement Mode MOSFET
TSM2306 30V N-Channel MOSFET
TSM2307 30V P-Channel MOSFET

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