Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process.
Features
- Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage ±50V guaranteed
Block Diagram
Ordering Information
Part No. TSM1N45DCS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Aval.
TSM1N45D Datasheet
