Datasheet Summary
TSM2N7000
Pin assignment: 1. Gate 2. Source 3. Drain
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60V N-Channel Enhancement Mode MOSFET
VDS = 60V
ID = 200mA
RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
High...
