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TSM2N70 - 60V N-Channel Enhancement Mode MOSFET

Description

The TSM2N7000 is produced using high cell density, DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.

Features

  • — — — — — High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum.

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Datasheet preview – TSM2N70

Datasheet Details

Part number TSM2N70
Manufacturer Taiwan Semiconductor Company
File Size 144.39 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM2N70 Datasheet
Additional preview pages of the TSM2N70 datasheet.

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Full PDF Text Transcription

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TSM2N7000 Pin assignment: 1. Gate 2. Source 3. Drain www.DataSheet4U.com 60V N-Channel Enhancement Mode MOSFET VDS = 60V ID = 200mA RDS (on), Vgs @ 10V, Ids @ 500mA = 5.0Ω General Description The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other switching applications.
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