Datasheet Details
| Part number | TSM2N70 |
|---|---|
| Manufacturer | Taiwan Semiconductor Company |
| File Size | 144.39 KB |
| Description | 60V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 TSM2N70 Datasheet
|
|
|
General Description
The TSM2N7000 is produced using high cell density, DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.
Key Features
- High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum.
