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TSM35N03 - Straight 1-Row BergStik II Headers

Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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Datasheet Details

Part number TSM35N03
Manufacturer Taiwan Semiconductor Company
File Size 235.14 KB
Description Straight 1-Row BergStik II Headers
Datasheet download datasheet TSM35N03 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM35N03 25V N-Channel MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 8.5 @ VGS = 10V 13 @ VGS = 4.5V ID (A) 30 30 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Block Diagram Part No. TSM35N03CP RO Package TO-252 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, VGS @4.5V. VGS ID Pulsed Drain Current, VGS @4.