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TSM9426D - 20V Dual N-Channel MOSFET w/ESD Protected

Key Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.
  • ESD Protect 2KV.

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Datasheet Details

Part number TSM9426D
Manufacturer Taiwan Semiconductor Company
File Size 245.53 KB
Description 20V Dual N-Channel MOSFET w/ESD Protected
Datasheet download datasheet TSM9426D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM9426D 20V Dual N-Channel MOSFET w/ESD Protected SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 14 @ VGS = 10V 20 16 @ VGS = 4.5V 22 @ VGS = 2.5V 30 @ VGS = 1.8V Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Block Diagram ID (A) 9.4 8 6 4 Part No. Package TSM9426DCS RL SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current, VGS @4.5V.