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1N4757A - Glass Passivated Junction Silicon Zener Diodes

This page provides the datasheet information for the 1N4757A, a member of the 1N4740A Glass Passivated Junction Silicon Zener Diodes family.

Datasheet Summary

Features

  • AEC-Q101 qualified available.
  • Glass passivated chip junction.
  • Low profile package.
  • Built-in strain relief.
  • Low inductance.
  • Typical IR less than 5μA above 11V.
  • RoHS Compliant.
  • Halogen-free according to IEC 61249-2-21.

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Datasheet preview – 1N4757A

Datasheet Details

Part number 1N4757A
Manufacturer Taiwan Semiconductor
File Size 443.30 KB
Description Glass Passivated Junction Silicon Zener Diodes
Datasheet download datasheet 1N4757A Datasheet
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Full PDF Text Transcription

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1N4740A – 1M200Z Taiwan Semiconductor 1W, 10V - 200V Zener Diode FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● Low profile package ● Built-in strain relief ● Low inductance ● Typical IR less than 5μA above 11V ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● For general purpose regulation and protection applications KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 200 V Test current IZT 1.2 - 25 mA Ptot 1 W TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.
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