1N5407 Description
G15 CREAT BY ART 1000 FIG. 5 TYPICAL JUNCTION CAPACITANCE 1N5400 - 1N5408 Taiwan Semiconductor JUN.
1N5407 Key Features
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
- 55 to +150
- 55 to +150
- Optional available