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2SA2029-R Datasheet PDF

Taiwan Semiconductor 2SA2029-R

PNP Bipolar Transistor

Part No. 2SA2029-R
Datasheet 2SA2029-R Download
Manufacturer
Taiwan Semiconductor
Description PNP Bipolar Transistor
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2SA2029-R datasheet page 1 preview

FEATURES

- Epitaxial planar die construction - Surface Mount Device Type - Moisture sensitivity level 1 - For high voltage switcing and amplifier application - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - Excellent hFE linearity - Complements the 2SC5658 SOT-723

MECHANICAL DATA

- Case: SOT-723 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 1.27mg +/- 20% 1. BASE 2. EMITTER 3. COLLECTOR

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(TA=25℃ unless otherwise noted) PARAMETER SYMBOL LIMIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg -60 -50 -6 -150 150 150 -55 to + 150 UNIT V V V mA mW °C °C PARAMETER Collector-Base Breakdown Voltage Coll...
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