AR50B Overview
3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1000 8.3ms Single Half Sine Wave 100 Fig. 5 TYPICAL JUNCTION CAPACITANCE AR50A thru AR50M Taiwan Semicond.
AR50B Key Features
- Diffused junction
- Low leakage
- High surge capability
- Low cost construction utilizing void-free molded plastic technique
- pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- 50 to +175
- 50 to +175
