Taiwan Semiconductor BAV20
High Voltage Switching Diode
| Part No. | BAV20 |
|---|---|
| Datasheet | BAV20 Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | High Voltage Switching Diode |
| Buy | Stock & Price |
FEATURES
- Fast switching device (trr<4.0ns) - Through-hole device type mounting - Hermetically sealed glasss - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and leads are readily solderable - Packing code with suffix "G" means Halogen freeMECHANICAL DATA
- Case: DO-35 package - High temperature soldering guaranteed: 260oC/10s - Polarity: Indicated by black cathode band - Weight: 109 ± 4 mg DO-35 Hermetically Sealed GlassMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25oC unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Peak Forward Surge Current Pulse Width = 1 s , Square Wave Pulse Width = 1 μs , Square Wave PD IFSM 500 1 4 Average Forward Current Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range IO RθJA TJ , TSTG 200 300 -65 to +200 PARAMETER BAV19 Reverse Breakdown Voltage BAV20 IR = 100 μA BAV21 Forward Voltage Reverse Leakage Current Junction Capacitance IF = 100 mA IF = 200 mA BAV19 VR = 10...
