BZX55-C24 Datasheet | Taiwan Semiconductor

Features — Fast switching speed — General purpose rectification — Silicon epitaxial planar construction Mechanical Data — Case: DO-35 — Leads:Solderableper MIL-STD-202, Method 208 — Polarity: Cathode band — Marking: Type number — Weight: 0.13 grams (approx.) BZX55C SERIES 500m W Zener Diode DO-35 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 OC ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Forward Voltage @ IF = 100m A Power Dissipation (Note 1) Pd 500 m W Thermal Resistance Junction to Ambient Air (Note 2) Operating and Storage Temperature Range RθJA TJ, TSTG 0.3 -65 to + 175 K /m W OC Notes: 1. Valid Provided that Lead are kept at ambient temperature at a distance of 8mm from case. 2. Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. Version: A07 RATINGS AND CHARACTERISTIC CURVES (BZX55C SERIES) CHANGES IN THE POWER DISSIPATION DUE TO THE AMBIENT TEMPERATURE LEAD TEMPERATURE. (0C) AMBIENT TEMPERATURE Version: A07 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) Device Type Nominal Zener Voltage Maximum Zener Vz at Izt Impedance ZZT @ IZT ZZK @...